creat by art - low forward voltage drop - ideal for automated placement - high current capability - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - green compound (halogen-free) base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 50 100 150 200 300 400 500 600 v v rms 35 70 105 140 210 280 350 420 v v dc 50 100 150 200 300 400 500 600 v i f(av) a trr ns cj pf r jc o c/w t j o c t stg o c document number: ds_d1405076 version: g14 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a sfs 1001 g sfs 1002 g sfs 1003 g sfs 1004 g sfs 1005 g sfs 1006 g maximum reverse recovery time (note 2) 35 typical thermal resistance 2 operating junction temperature range - 55 to +150 typical junction capacitance (note 3) 70 50 maximum reverse current @ rated vr t j =25 t j =125 i r 1 a 200 v maximum instantaneous forward voltage (note 1) i f = 5 a v f peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 125 a 0.975 1.3 unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 10 sfs 1007 g sfs 1008 g maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol 1.7 note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data to-263ab (d 2 pak) case: to-263ab (d 2 pak) polarity: as marked weight: 1.37 g (approximately) sfs1001g thru sfs1008g taiwan semiconductor surface mount su p er fast rectifiers features - moisture sensitivity level: level 1, per j-std-020
part no. part no. sfs1008g sfs1008g sfs1008g (ta=25 unless otherwise noted) document number: ds_d1405076 version: g14 sfs1008ghrn h rn aec-q101 qualified ratings and characteristics curves sfs1008g rn rn sfs1008g rng rn g green compound note 1: "x" defines voltage from 50v (sfs1001g) to 600v (sfs1008g) example preferred p/n aec-q101 qualified packing code green compound code description sfs100xg (note 1) prefix "h" rn suffix "g" d 2 pak 800 / 13" paper reel c0 d 2 pak 50 / tube sfs1001g thru sfs1008g taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing 0 2 4 6 8 10 12 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 30 60 90 120 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj=25 tj=100 tj=75 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characterisrics sfs1007g-sfs1008g pulse width=300 s 1% duty cycle sfs1005g-sfs1006g sfs1001g-sfs1004g
min max min max a - 10.5 - 0.413 b 14.60 15.88 0.575 0.625 c 2.41 2.67 0.095 0.105 d 0.68 0.94 0.027 0.037 e 2.29 2.79 0.090 0.110 f 4.44 4.70 0.175 0.185 g 1.14 1.40 0.045 0.055 h 1.14 1.40 0.045 0.055 i 8.25 9.25 0.325 0.364 j 0.36 0.53 0.014 0.021 k 2.03 2.79 0.080 0.110 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1405076 version: g14 marking diagram f 9.5 0.374 g 2.5 0.098 d 3.5 0.138 e 16.9 0.665 b 8.3 0.327 c 1.1 0.043 suggested pad layout symbol unit (mm) unit (inch) a 10.8 0.425 sfs1001g thru sfs1008g taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 40 50 60 70 80 90 100 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance sfs1005g-sfs1008g sfs1001g-sfs1004g f=1.0mhz vsig=50mvp-p
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1405076 version: g14 sfs1001g thru sfs1008g taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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